AOS的功率IC、 瞬态电压、 电压调整器电路图大全(上部)
2018-04-18 10:00:41
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(泰德兰报道:)Circuit diagram of a simple voltage amplifier

(泰德兰报道:)|简单电压放大器电路图(一)

Many scientific instruments and sensors need to exchange high voltage drives. High voltage driver is suitable for driving electrodes in many application systems. The difficulty is to increase the output of the common operational amplifier to a very high voltage. The existing AC high voltage amplifier module can only amplify the output to about 1200Vp-p. A simplified AC high voltage amplifier using complementary cascade NMOS and PMOS transistors is presented in this design example (Fig. 1). The OP07 operational amplifier has low input offset voltage, small input bias current and high open-loop gain. These characteristics make this operational amplifier very suitable for high gain instrumentation system. Besides, the misalignment and gain of OP07 has excellent time stability and temperature stability. LM356 level AC gain depends on R3, R4, R7 and R9, about 100.

许多科学仪器和传感器都需要交流高压驱动器。高压驱动器在很多应用系统中适合于驱动电极。难点在于将普通运算放大器的输出提高到很高的电压。现有的交流高压放大器模块只能将输出放大到大约1200Vp-p以内。本设计实例提出的一种简化交流高压放大器使用了互补的级联NMOS和PMOS晶体管(图1)。OP07运算放大器的输入失调电压低,输入偏置电流小,开环增益高。这些特性使这种运算放大器非常适合用于高增益仪器系统。此外,OP07的失调和增益具有极好时间稳定性和温度稳定性。LM356级的交流增益取决于R3、R4、R7和R9,大约为100。

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Simple voltage amplifier circuit diagram (high voltage driver / common emitter /XC6415/AOZ1037PI operational amplifier circuit detailed explanation)

简单电压放大器电路图大全(高压驱动器/共射极/XC6415/AOZ1037PI运算放大器电路详解)

The maximum drain level source level nominal voltage and the maximum gate drain level nominal voltage of MTP2P50E type high voltage P channel MOSFET are all 500V. The maximum drain level source level nominal voltage and the maximum gate drain level nominal voltage of BUK456800B type high voltage N channel MOSFET are all 800V. Q1 to Q6 are all PMOS transistors, and Q7 to Q12 are all NMOS transistors. These FET are very suitable for high voltage cascade circuits. They are connected in series symmetrically, so as to improve their total breakdown voltage of power system. The bias circuit is made up of paired independent bias resistors R10 to R13 and R14 to R17, thus forming the symmetrical output of the high voltage amplifier. Figure 2 shows a sinusoidal input signal with a peak to peak voltage of 8Vp-p, a frequency of 100Hz, and an output signal with a peak to peak voltage of 1800Vp-p. Figure 3 shows the sinusoidal input signal with peak to peak voltage of 750mVp-p and frequency of 2kHz, and the output signal with peak to peak voltage of 200Vp-p. The total power bandwidth of the circuit is about 200kHz.

MTP2P50E型高压p沟道MOSFET的最大漏级-源级标称电压和最大栅极-漏级标称电压均为500V。

BUK456800B型高压n沟道MOSFET的最大漏级-源级标称电压和最大栅极-漏级标称电压均为800V。Q1~Q6都是PMOS晶体管,Q7~Q12均为NMOS晶体管。这些场效应管非常适合用于高压级联电路。它们对称地串联连接起来,以提高它们适用于电源系统的总击穿电压。偏压电路由成对独立的偏置电阻器R10~R13和R14~R17组成,从而形成了高压放大器的对称输出。图2示出了峰-峰电压为8Vp-p、频率为100Hz的正弦输入信号以及峰-峰电压为1800Vp-p的输出信号。图3示出了峰-峰电压为750mVp-p、频率为2kHz的正弦输入信号和峰-峰电压为200Vp-p的输出信号。该电路的总功率带宽大约是200kHz。

简单电压放大器电路图大全(高压驱动器/共射极/XC6415/AOZ1037PI运算放大器电路详解)

Simple voltage amplifier circuit diagram (high voltage driver / common emitter /XC6415/AOZ1037PI operational amplifier circuit detailed explanation)

简单电压放大器电路图大全(高压驱动器/共射极/XC6415/AOZ1037PI运算放大器电路详解)

Simple voltage amplifier circuit diagram (high voltage driver / common emitter /XC6415/AOZ1037PI operational amplifier circuit detailed explanation)

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

简单电压放大器电路图(二)

Circuit diagram of a simple voltage amplifier (two)


Exposed Pad SO-8器件是一款精密、低噪声、低输入偏置电流、四通道运算放大器,此篇主要介绍了

Exposed Pad SO-8特性、应用范围、参考设计电路以及电路分析,帮助大家缩短设计时间。

Exposed Pad SO-8 device is a precision, low noise, low input bias current, four channel operational amplifier. This article mainly introduces the Exposed Pad SO-8 characteristics, application range, reference design circuit and circuit analysis to help people shorten the design time.

Exposed Pad SO-8介绍:

Exposed Pad SO-8 introduces:

Exposed Pad SO-8系列由极高精度的单通道、双通道和四通道放大器组成,具有极低失调电压和漂移、低输入偏置电流、低噪声及低功耗等特性。使用1000pF以上容性负载时输出稳定,无需外部补偿。电源电压为30V时,每个放大器的电源电流小于500μA。内置500Ω串联电阻可保护输入,允许输入信号电平高出电源电压若干伏特,并保证无反相。

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

The Exposed Pad SO-8 series is composed of extremely high precision single channel, dual channel and four channel amplifiers with extremely low offset voltage and drift, low input bias current, low noise and low power consumption. The output is stable when using capacitive loads above 1000pF, without external compensation. When the supply voltage is 30V, the power supply current of each amplifier is less than 500 A. Built in 500 ohm series resistor, it can protect input, allow input signal level to be higher than supply voltage and volt, and ensure no inverting.


Exposed Pad SO-8特点:

Exposed Pad SO-8 features:

低失调电压:60μV(最大值)

Low offset voltage: 60 mu V (maximum)

极低失调电压漂移:0.7μV/°C(最大值)

Extremely low offset voltage drift: 0.7 V/, C (max).

低输入偏置电流:2nA(最大值)

Low input bias current: 2nA (maximum)

低噪声:8nV/√Hz(典型值)

Low noise: 8nV/ V Hz (typ)

简单电压放大器电路图大全(高压驱动器/共射极/XC6415/AOZ1037PI运算放大器电路详解)

Simple voltage amplifier circuit diagram (high voltage driver / common emitter /XC6415/AOZ1037PI operational amplifier circuit detailed explanation)

简单电压放大器电路图(三)

Circuit diagram of a simple voltage amplifier (three)

共射极放大电路

Common emitter amplifying circuit

简单电压放大器电路图大全(高压驱动器/共射极/XC6415/AOZ1037PI运算放大器电路详解)

Simple voltage amplifier circuit diagram (high voltage driver / common emitter /XC6415/AOZ1037PI operational amplifier circuit detailed explanation)

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

注意要点:

Pay attention to the main points:

1、三极管的结构、三极管各极电流关系、特性曲线、放大条件;

1, the structure of the triode, the pole current relations, the characteristic curves and the amplification conditions of the transistors.

2、元器件的作用、电路的用途、电压放大倍数、输入和输出的信号电压相位关系、交流和直流等效电路图;

2, the role of components, the use of circuits, voltage amplification, input and output signal voltage phase relationship, AC and DC equivalent circuit diagram.

3、静态工作点的计算、电压放大倍数的计算。

3, calculation of static working point and calculation of voltage magnification.

简单电压放大器电路图(四)

Circuit diagram of a simple voltage amplifier (four)

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

简单电压放大器电路图大全(高压驱动器/共射极/XC6415/AOZ1037PI运算放大器电路详解)

Simple voltage amplifier circuit diagram (high voltage driver / common emitter /XC6415/AOZ1037PI operational amplifier circuit detailed explanation)


阻容耦合分压偏置共发射极电压放大电路如图3.7a.1所示。该电路中的双极型晶体管T是电路中的放大器件,它能把输入回路(基极—发射极)中微小的电流信号在输出回路中(集电极—发射极)放大为一定大小的电流信号。输出回路中得到的较大输出电流是源自直流电源,双极型晶体管在电路中实际上起着电流控制作用。UCC电源提供放大电路能量,还为双极型晶体管的集电极提供反向偏置,使其处于放大工作状态;并通过基极电阻RCCUB1和RB2的分压,提供合适的基极电压,调节电位器RP的阻值可以改变基极电流,从而改变集电极电流。

The resistance capacitance coupled partial voltage bias common emitter voltage amplifying circuit is shown in figure 3.7a.1. The bipolar transistor T in the circuit is an amplifier in the circuit. It can amplify a small current signal in the input circuit (the base emitter) in the output circuit (the collector emitter) to a certain size of the current signal. The larger output current in the output circuit is derived from the DC power supply, and the bipolar transistor actually acts as a current control in the circuit. The UCC power supply provides the power of the amplifying circuit, and provides the reverse bias for the bipolar transistor collector to be in the amplifying state, and provides the appropriate base voltage through the partial voltage of the base resistance RCCUB1 and RB2, and adjusts the resistance of the potentiometer RP to change the base current, thereby changing the collector current.

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

集电极电阻RC可以将集电极电流的变化变换为集电极电压的变化,在输出回路中得到放大的电压信号。发射极电阻RE对集电极电流的直流分量有负反馈的作用,稳定了静态工作电流。发射极电容CE对集电极电流的交流分量提供了交流通路,起了分流交流作用。C1、C2能够分隔直流电位,通过交流分量电流,起到隔直流通交流的作用;它们分别把交流信号电流输入基极以及把放大后的交流信号电压送到负载端,而不影响晶体管的直流工作状态。

The collector resistance RC can transform the change of collector current to the change of collector voltage, and gain amplified voltage signal in the output circuit. The emitter resistance RE has negative feedback effect on the DC component of the collector current, stabilizing the quiescent current. The emitter capacitance CE provides an AC path to the AC component of collector current, and plays a role of shunt communication. C1 and C2 can separate the DC potential and communicate by AC component current, which input the AC signal current to the base and send the amplified AC signal voltage to the load end, without affecting the DC working state of the transistor.



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