AOS场效应管的功率放大解析寿命/AOZ1057AIL的资料下载地址,不一样的共享(上部)
2018-04-18 11:46:23
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Field effect tube enlargement circuit diagram 

场效应管放大电路图 


Figure 3-26 shows a super small radio circuit, which uses two transistors. The circuit has high sensitivity.

图3-26所示是一种超小型收音机电路,它采用两只晶体管,这种电路具有较高的灵敏度。

场效应管放大电路图大全(五款场效应管放大电路原理图详解)

The field effect transistor amplifying circuit diagram Daquan (five FET amplifying circuit schematic diagram detailed explanation).

图3-26场效应管在袖珍收音机电路中的应用

Fig. 3-26 application of field effect transistor in pocket radio circuit.

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该电路中,电池作为直流电源通过负载电阻器R1为场效应管漏极提供偏置电压,使其工作在放大状态。由外接天线接收天空中的各种信号,交流信号通过C1,进入LC谐振电路。LC谐振电路是由磁棒线圈和电容器组成的,谐振电路选频后,经C4耦合至场效应管VT的栅极,与栅极负偏压叠加,加到场效应管栅极上,使场效应管的漏极电流ID相应变化,并在负载电阻器R1上产生压降,经C5隔离直流后输出,在输出端即得到放大了的信号电压。放大后的信号送入三极管的基极,由三极管放大后输出较纯净的音频信号送到耳机。

In this circuit, the battery as a DC power supply provides bias voltage for the field effect transistor drain electrode through the load resistor R1, making it work in the amplification state. All kinds of signals in the sky are received by the external antenna, and the AC signals are entered into the LC resonant circuit through C1. The LC resonant circuit is composed of magnetic rod coil and capacitor. After frequency selection, the resonant circuit is coupled to the gate of the field effect tube VT by C4 coupling to the gate of the field effect tube, adding to the gate of the field effect tube, making the leakage current ID of the field effect tube changing correspondingly, and producing the pressure drop on the load resistor R1, and output after C5 isolation DC. The output terminal is the amplified signal voltage. The amplified signal is sent to the base of the transistor, amplified by the transistor, and output a more pure audio signal to the earphone.


图3-27所示是FM收音机调谐电路,它是由高频放大器VT1、混频器VT3和本机振荡器VT2等部分构成的。天线感应的FM调频广播信号,经输入变压器L1加到VT1晶体管的栅极,VT1为高频放大器主要器件,它将FM高频信号放大后经变压器L2加到混频电路VT3的栅极,VT2和LC谐振电路构成本机振荡器,振荡信号由振荡变压器的次级送往混频电路VT3的源极。混频电路VT3由漏极输出,经中频变压器IFT(L4)输出10.7MHz中频信号。

Figure 3-27 shows the FM radio tuning circuit, which is made up of high-frequency amplifier VT1, mixer VT3 and local oscillator VT2. The antenna induction FM FM broadcasting signal is added to the gate of the VT1 transistor via the input transformer L1, and VT1 is the main component of the high frequency amplifier. It amplifies the FM high frequency signal to the grid of VT3 in the mixing circuit VT3 after the transformer L2 is amplified, and the VT2 and the LC resonant circuit constitute the local oscillator, and the oscillating signal is sent to the mixing power from the secondary of the oscillating transformer. The source of road VT3. The mixer circuit VT3 is output from the drain, and the 10.7MHz intermediate frequency signal is output through the intermediate frequency transformer IFT (L4).

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场效应管放大电路图大全(五款场效应管放大电路原理图详解)

The field effect transistor amplifying circuit diagram Daquan (five FET amplifying circuit schematic diagram detailed explanation).


图3-27FM收音机电路(调谐器部分)

Figure 3-27FM radio circuit (tuner section)


场效应管放大电路图(二)

Field effect tube enlargement circuit diagram (two)


与双极型晶体管一样,场效AM29LV017D-70EC应管也有三种基本接法:共源、共漏和共栅极接法,其中,共源相当于共发射极接法;共漏相当于共集电极接法;共栅相当于共基极接法。

As with bipolar transistors, there are three basic connections in the field effective AM29LV017D-70EC tube: common source, common leakage and common grid connection, in which common source is equivalent to common emitter connection; common leakage is equivalent to common collector connection; CO grid is equivalent to common base connection.


共源极电路,如图4-19(a)所示,相当于双极晶体管的共发射极电路。当交流信号Ui经C,加到栅一源极时,使栅极偏压随信号而变,于是控制了ID的变化,在RL上产生压降,通过C2将放大了的信号电压输出。

The common source circuit is shown in Figure 4-19 (a), which is equivalent to the common emitter circuit of bipolar transistor. When the AC signal Ui is added to the gate source by C, the bias voltage varies with the signal, so the change of the ID is controlled, the voltage drop is generated on the RL, and the amplified signal voltage is output by C2.


场效应管放大电路图大全(五款场效应管放大电路原理图详解)

The field effect transistor amplifying circuit diagram Daquan (five FET amplifying circuit schematic diagram detailed explanation).

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

如果用Rc;表示场效应管的栅极偏置电阻,用R喁表示场效应管的栅一源间电阻,则共源电路的输入电阻R,=Rc//Rcs≈Rc(因Rcs》Rc)。

If Rc is used, the gate bias resistance of the field effect tube is expressed as the grid one Intersource resistance of the FET, then the input resistance of the common source circuit is R, =Rc / / Rcs Rc (Rcs "Rc).


如果用rDS来表示场效应管的漏一源间电阻,用RL来表示共源电路的负载电阻,则共源电路的输出电阻R。=RDS//RL~RL(因RDS》RL)。

If rDS is used to represent the leakage resistance between the source and the RL, the output resistance of the common source circuit is R. =RDS//RL to RL (because of RDS RL).


共源电路的电压放大倍数:K一-gmRL,式中,gm为场效应管的跨导,相当于晶体管的放大系数口,RL为负载电阻。

The voltage amplification factor of the common source circuit is K one -gmRL, GM is the transconductance of the field effect transistor, which is equivalent to the amplification coefficient port of the transistor, and RL is the load resistance.


由于共源极电路输入电阻高,电压增益大,故应用最广,但它的截止频率较低,在高频工作时受到一些限制。

Because the common source circuit has high input resistance and large voltage gain, it has the most extensive application, but its cut-off frequency is relatively low, which is limited by high frequency operation.

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

共漏极电路,如图4-19(b)所示,与晶体管共集电路相似。同共源极电路一样,其输入电阻也取决于外加偏置电阻,即R,=Ri∥R2,电压放大倍数K≈1,且输入、输出电压同相,故也叫傲源极跟随器。由于这种电路输入电阻高、输出电阻低,且有良好的电压跟随特性,因而常用作缓冲放大器,起到隔离、阻抗变换的作用。

The common drain circuit, as shown in Figure 4-19 (b), is similar to the transistor common collector circuit. Like common source circuit, its input resistance also depends on the external bias resistance, that is, R, =Ri R2, voltage amplification multiple K 1, and the input and output voltages are in phase, so it is also called the proud source follower. Since this circuit has high input resistance, low output resistance and good voltage following characteristics, it is often used as a buffer amplifier to play the role of isolation and impedance transformation.


共栅极电路,如图4-19(c)所示,它与晶体管共基电路相近。其输入电阻极低(Ri≈l/gm),输出电阻较高R。≈R。,有良好的电压放大特性,因而常用于高频电压放大。

The common gate circuit, as shown in Figure 4-19 (c), is similar to the common base circuit of transistors. The input resistance is very low (Ri = L / GM), high output resistance R. About R. Because of its good voltage amplification characteristics, it is often used for high frequency voltage amplification.

场效应管放大电路图(三)

Field effect tube enlargement circuit diagram (three)


场效应管50W音频功率放大电路

Field effect transistor 50W audio power amplifier circuit

场效应管放大电路图大全(五款场效应管放大电路原理图详解)

The field effect transistor amplifying circuit diagram Daquan (five FET amplifying circuit schematic diagram detailed explanation).

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

场效应管放大电路图(四)

Field effect tube enlargement circuit diagram (four)


以场效应晶体管为基本元件的放大器的电路结构

The circuit structure of amplifier based on field effect transistor.

场效应管单管甲类前级放大器见图1。Tn源极电位实测为0.5V,漏极电位为5.0V,漏极电流IDSS等于1.25mA。根据2SK30AMT出厂说明书载明的相关内容,该工作点的线性最好。

The field effect transistor (FET) front class a class a amplifier is shown in Figure 1. The source potential of Tn is 0.5V, the drain potential is 5.0V, and the drain current IDSS is equal to 1.25mA. According to the related contents in the 2SK30AMT factory instructions, the linearity of the work point is the best.


场效应管放大电路图大全(五款场效应管放大电路原理图详解)

The field effect transistor amplifying circuit diagram Daquan (five FET amplifying circuit schematic diagram detailed explanation).

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

该级放大器放大倍数依据公式Au=-gmRf3计算,式中gm——场效应管的跨导。

The amplification factor of this stage amplifier is calculated according to formula Au=-gmRf3, and GM is the transconductance of FET.


2SK30AMT在VDs=10V,VGS=0V时的最小跨导gm=1.2ms。那么该级放大器放大倍数为6.72。

The minimum transconductance gm=1.2ms of 2SK30AMT at VDs=10V and VGS=0V. Then the magnification of the amplifier is 6.72.


音量调节通过进阶开关加11个固定电阻进行,每个电阻10k。这样做的好处是既经济,质量又好。音量调节实为10级,听音效果十分理想。

The volume control is carried out through a progressive switch plus 11 fixed resistors, each resistor 10K. The advantage of doing this is both economic and good quality. The volume control is actually 10 level, and the sound effect is very ideal.


第二级放大电路作源极输出器,旨在匹配电路,提高前级的负载能力,放大倍数近似为1。静态工作点仍然十分重要,Tf2源极电位实测为5.5V,位于电源电压的中值附近,很好。在该级上,同样可算出漏极电流2.75mA,也要满足甲类放大器对静态的要求。

The second stage amplifying circuit is used as the source output device, which is designed to match the circuit to improve the load capacity of the front stage, and the amplification factor is approximately 1. The static working point is still very important. The Tf2 source potential is measured at 5.5V, which is located near the median of the supply voltage. At this level, the drain current 2.75mA can also be calculated, and the static requirements of class a amplifier can also be satisfied.

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隔直电容C17,C18对音质的好坏影响较大,选用进口名牌WIMA电容。

The direct capacitance C17 and C18 have great influence on the sound quality. The imported brand WIMA capacitor is chosen.


后级放大电路仍采用推挽式、甲乙类放大器

The latter amplifier still uses push-pull and class a amplifier.


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