AOS场效应管是如何控制游走与电路中的电流进行分析不一样的解说
2018-04-18 13:46:18
返回列表

(AOS泰德兰报道:)

The majority carrier is involved in conduction, also known as monopole transistor. It belongs to the voltage controlled semiconductor device. With the advantages of low input resistance, low noise, low power consumption, large dynamic range, easy integration, no two breakdown and wide safety area, it has become a powerful competitor for bipolar transistors and power transistors.

由多数载流子参与导电,也称为单极型晶体管。它属于电压控制型半导体器件。具有输入电阻高噪声小、功耗低、动态范围大、易于集成、没有二次击穿现象、安全工作区域宽等优点,现已成为双极型晶体管和功率晶体管的强大竞争者。

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

Field effect transistor (FET) is a semiconductor device controlled by the electric field effect of input loop to control the output current.

场效应管(FET)是利用控制输入回路的电场效应来控制输出回路电流的一种半导体器件,并以此命名。

场效应管特点

Characteristics of field effect tube


(1)场效应管是电压控制器件,它通过VGS(栅源电压)来控制ID(漏极电流);

(1) field-effect transistor is a voltage control device. It controls the ID (drain current) through VGS (gate voltage).


(2)场效应管的控制输入端电流极小,因此它的输入电阻(10~10Ω)很大。

(2) the input current of the field effect transistor is very small, so its input resistance (10~10 ohms) is very large.


(3)它是利用多数载流子导电,因此它的温度稳定性较好;

(3) it uses most carriers to conduct electricity, so its temperature stability is better.


(4)它组成的放大电路的电压放大系数要小于三极管组成放大电路的电压放大系数;

(4) the voltage amplification factor of the amplifying circuit is smaller than that of the transistor.


(5)场效应管的抗辐射能力强;

(5) the radiation resistance of the field effect tube is strong;


(6)由于它不存在杂乱运动的电子扩散引起的散粒噪声,所以噪声低。

(6) because it does not exist the granular noise caused by the electronic diffusion of chaotic motion, so the noise is low.

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

场效应管的参数

Parameters of field effect tube


场效应管的参数很多,包括直流参数、交流参数和极限参数,但普通运用时只需关注以下主要参数:饱和漏源电流IDSS夹断电压Up,(结型管和耗尽型绝缘栅管,或开启电压UT(加强型绝缘栅管)、跨导gm、漏源击穿电压BUDS、最大耗散功率PDSM和最大漏源电流IDSM。

There are many parameters of the field effect tube, including DC parameters, AC parameters and limit parameters, but the main parameters are only the main parameters: saturated leakage current IDSS clip voltage Up, (junction tube and depleted insulated gate tube, or open voltage UT (enhanced insulated gate tube), transconductance GM, leakage source breakdown voltage BUDS, maximum The dissipative power PDSM and the maximum drain current IDSM.


(1)饱和漏源电流

(1) saturated leakage current


饱和漏源电流IDSS是指结型或耗尽型绝缘栅场效应管中,栅极电压UGS=0时的漏源电流。

The saturation leakage current IDSS refers to the drain source current in junction mode or depletion mode insulated gate FET, when gate voltage UGS = 0.


(2)夹断电压

(2) pinch voltage


夹断电压UP是指结型或耗尽型绝缘栅场效应管中,使漏源间刚截止时的栅极电压。如同4-25所示为N沟道管的UGS一ID曲线,可明白看出IDSS和UP的意义。如图4-26所示为P沟道管的UGS-ID曲线。

The clamping voltage UP refers to the gate voltage in the junction or depletion type insulated gate FET, which makes the drain source cut off. Like 4-25 UGS ID curves shown in N, we can see clearly the meaning of IDSS and UP. As shown in Figure 4-26, the UGS-ID curve of the P channel tube is shown.


(3)开启电压

(3) open voltage

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

开启电压UT是指加强型绝缘栅场效应管中,使漏源间刚导通时的栅极电压。如图4-27所示为N沟道管的UGS-ID曲线,可明白看出UT的意义。如图4-28所示为P沟道管的UGS-ID曲线。

The open voltage UT refers to the gate voltage in the enhanced insulated gate field-effect transistor, which makes the drain source just connect. As shown in Figure 4-27, the UGS-ID curve of N trench pipe can be clearly seen the meaning of UT. As shown in Figure 4-28, the UGS-ID curve of the P channel tube is shown.


(4)跨导

(4) transconductance


跨导gm是表示栅源电压UGS对漏极电流ID的控制才能,即漏极电流ID变化量与栅源电压UGS变化量的比值。9m是权衡场效应管放大才能的重要参数。

The transconductance GM is the control ability of gate source voltage UGS to drain current ID, that is the ratio of ID variation of drain current to gate source voltage UGS. 9m is an important parameter to balance the amplification effect of FET.

(5)漏源击穿电压

(5) breakdown voltage of leakage source


漏源击穿电压BUDS是指栅源电压UGS一定时,场效应管正常工作所能接受的最大漏源电压。这是一项极限参数,加在场效应管上的工作电压必需小于BUDS。

The drain source breakdown voltage BUDS refers to the maximum drain source voltage that the field source can accept normally when the gate voltage UGS is constant. This is a limit parameter, and the working voltage on the field effect transistor must be less than BUDS.

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

(6)最大耗散功率

(6) maximum dissipative power


最大耗散功率PDSM也是—项极限参数,是指场效应管性能不变坏时所允许的最大漏源耗散功率。运用时场效应管实践功耗应小于PDSM并留有—定余量。

The maximum dissipation power PDSM is also the term limit parameter, which is the maximum drain power dissipation allowed by the field effect transistor when the performance is constant. The power consumption of time field effect transistor should be less than PDSM, and there is a specific allowance.


(7)最大漏源电流

(7) maximum leakage current


最大漏源电流IDSM是另一项极限参数,是指场效应管正常工作时,漏源间所允许经过的最大电流。场效应管的工作电流不应超越IDSM。

The maximum leakage current IDSM is another limiting parameter, which means the maximum current allowed by the drain source when the FET works normally. The working current of the field effect tube should not exceed the IDSM.

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

场效应管的作用

Effect of field effect tube


1、场效应管可应用于放大。由于场效应管放大器的输入阻抗很高,因此耦合电容可以容量较小,不必使用电解电容器。

1. Field effect tubes can be applied to magnification. Because the input impedance of FET amplifier is very high, the coupling capacitance can be smaller and no electrolytic capacitor is needed.


2、场效应管很高的输入阻抗非常适合作阻抗变换。常用于多级放大器的输入级作阻抗变换。

2, the input impedance of FET is very high, which is very suitable for impedance transformation. It is usually used for impedance transformation of input stage of multistage amplifier.


3、场效应管可以用作可变电阻。

3. The field effect tube can be used as a variable resistance.


4、场效应管可以方便地用作恒流源。

4. The field effect tube can be used as a constant current source.


5、场效应管可以用作电子开关。

5. The field effect tube can be used as an electronic switch.


场效应管在电路中如何控制电流大小

How the field effect tube controls the current size in the circuit


MOS管是电压控制器件,也就是需要使用电压控制G脚来实现对管子电流的控制。

The MOS tube is a voltage control device, that is to say, the voltage control G pin is needed to control the current of the tube.


一般市面上最常见的是增强型N沟通MOS管,你可以用一个电压来控制G的电压,MOS管导通电压一般在2-4V,不过要完全控制,这个值要上升到10V左右。给你推荐一种方法。

In general, the most common market is enhanced N communication MOS tube, you can use a voltage to control the voltage of G, the MOS tube conduction voltage is generally 2-4V, but to complete control, this value will rise to about 10V. Recommend a way to you.


基本方法:用一个控制电压(比较器同相输入端)和一个参考电压(比较器反相输入端),同时进入电压比较器(比较器电源接正12V和地,比如LM358当比较器),比较器的输出经过5.1K电阻上拉后接G脚,如果控制电压比参考电压高,则控制MOS管导通输出电流。

The basic method: with a control voltage (the comparator phase input) and a reference voltage (the counter input of the comparator), and at the same time entering the voltage comparator (the comparator power supply 12V and the ground, such as the LM358 comparator), the output of the comparator is pulled up to the G foot after the 5.1K resistance is pulled, if the control voltage is compared to the reference voltage. High, the MOS tube is controlled to pass the output current.


参考电压可以来自于采样电阻,也就是在NMOS的S极接一个大功率小电阻后接地,这个电阻做电流采样,当电流流过电阻后会形成电压,把它放大处理后做参考。

The reference voltage can come from the sampling resistance, that is, after the S pole of NMOS is connected to a large power small resistance, this resistor does the current sampling, and when the current flows through the resistance, the voltage will be formed, and then it is amplified and used as a reference.


刚开始的时候,电流很小,所以控制电压比参考电压高很多,这时候G脚基本上都加了12V,可以使管子迅速导通,在很短时间后,当电流增大逐步达到某个值时,参考电压迅速上升,与控制电压接近并超过时,比较器就输出低电平(接近0V)使管子截止,电流减小。然后电流减少后,参考电压又下去,管子又导通,电流又增大。然后周而复始。

At the beginning, the current is very small, so the control voltage is much higher than that of the reference voltage. At this time, the G foot is basically added with 12V, which can lead the tube to pass quickly. After a very short time, when the current increases gradually to a certain value, the reference voltage rises rapidly, and the comparator outputs low electricity when it is close to the control voltage. The flat (close to 0V) makes the pipe cut off and the current decreases. Then, when the current is reduced, the reference voltage will go down, and the tube will turn on and the current will increase again. And then go round.

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

如果你用D/A输出代替控制电压,则可以获得对MOS管的精确控制,我们以前实现过输出范围10-2000mA,步进1mA,输出电流精度正负1mA的水平。

If you use the D/A output instead of the control voltage, you can get the exact control of the MOS tube. We have previously realized the output range of 10-2000mA, step 1mA, and the output current accuracy and negative 1mA level.

场效应管测量方法图解

Diagramming of field effect tube measurement method


场效应管英文缩写为FET.可分为结型场效应管(JFET)和绝缘栅型场效应管(MOSFET),我们平常简称为MOS管。而MOS管又可分为增强型和耗尽型而我们平常主板中常见使用的也就是增强型的MOS管。

The abbreviation of FET is FET., which can be divided into junction field effect transistor (JFET) and insulated gate field-effect transistor (MOSFET). We usually call it MOS tube. MOS tube can be further divided into enhanced and depleted type, which is commonly used in our motherboard, that is, an enhanced MOS tube.


下图为MOS管的标识

The following figure is the identification of the MOS tube

LDO,DC-DC,MOSFETs,TVS,AC-DC,电压检测器,POWER IC,IGBT,MOS,负载开关,TOREX,茂捷,AOS,松木代理商_深圳市泰德兰电子有限公司

我们主板中常用的MOS管GDS三个引脚是固定的。不管是N沟道还是P沟道都一样。把芯片放正从左到右分别为G极D极S极!如下图:

Our main board commonly used MOS tube GDS three pins are fixed. Both the N channel and the P channel are the same. The chip is placed from left to right, which is G pole D pole S pole. As follows:


用二极管档对MOS管的测量。首先要短接三只引脚对管子进行放电。

The measurement of the MOS tube with a diode gear. First, we need to short connect three pins to discharge the tube.


品质第一

品质第一

Quality first
价格合理

价格合理

price is reasonable
交货快捷

交货快捷

Fast delivery
服务至上

服务至上

Service-oriented
凝聚客户

凝聚客户

Convergence of customers
产品中心
AOS
国产 茂捷
日本 特瑞仕
台湾 松木 MOS管
国产 新洁能 MOS管
国产 LRC 二极管
国产 LRC 三极管
解决方案
解决方案
关于我们
公司介绍
企业文化
组织架构
新闻中心
投诉建议
关注我们
微信公众号扫描
联系电话:0755-83322522
友情链接:合肥按摩椅专卖店 多级给水泵 电子负载 音频变压器 触摸屏一体机 触控芯片 安全光栅 安检设备厂家 PE电熔管件 电池巡检仪 液晶广告机 电位器厂家 工业液晶显示器 usb数据线厂家 包装印刷 触控一体机 湖南中央空调 排针连接器 合肥大金中央空调 电子散热器 电子元器件商城 抄板解密

QQ客服联系客服

联系电话0755-83322522