The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23 package design