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SOT-23
- 产品概况
- 产品特点
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The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
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● RDS(ON) ≦68mΩ@VGS=-10V
● RDS(ON) ≦80mΩ@VGS=-4.5V
● RDS(ON) ≦100mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
