The MEE15N10-G is a N-Channel enhancement mode power field effect transistors, using Force-MOS patented Extended Trench Gate(ETG) technology. This advanced technology is especially tailored to minimize on state resistance and gate charge, and enhance avalanche capability. These devices are particularly suited for medium voltage application such as charger, adapter, notebook computer power management and other lighting dimming powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability