The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability