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The ME4920D is the Dual N-Channel logic enhancement mode power field effect transistors,using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on state resistance.These devices are particularly suited for low voltage application such as cellular phone,notebook computer power management and other battery powered circuits,and low in-line power loss that are needed in a very small outline surface mount package.
ME4920D是双N通道逻辑增强型功率场效应晶体管，采用高密度DMOS沟道技术。这种高密度工艺特别适合于最小化导通电阻。这些设备特别适合于低电压应用，如手机、笔记本电脑电源管理和其他电池供电的电路，以及非常小的外形表面贴装封装所需的低串联功耗。
应用：
●笔记本中的电源管理
●便携式设备
●电池供电系统
●DC/DC转换器
●负荷开关
●差示扫描量热仪
●液晶显示逆变器
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● RDS(ON)≦30 mΩ@VGS=10V
● RDS(ON)≦40 mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
