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The ME4456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,and low in-line power loss are needed in a very small outline surface mount package.
ME4456是使用高单元密度产生的N通道逻辑增强模式功率场效应晶体管，DMOS沟道技术。这种高密度工艺特别适合于最小化导通电阻。这些设备特别适用于低电压应用，如移动电话和笔记本电脑电源管理和其他电池供电电路的高压侧切换，在一个非常小的外形表面贴装封装中，需要低的在线功耗。
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● RDS(ON)≦24mΩ@VGS=10V
● RDS(ON)≦39mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
应用：
●笔记本中的电源管理
●电池供电系统
●DC/DC转换器
●负荷开关
