The AON2410 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON). This device is ideal for load switch

and battery protection applications

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The AON2410 combines advanced trench MOSFET

的aon2410结合先进的沟槽MOSFET

technology with a low resistance package to provide

提供低电阻封装的技术

extremely low R

极低的R

DS(ON)

DS（on）

. This device is ideal for load switch

。这种装置是理想的负荷开关。

and battery protection applications

电池保护应用

象征最大单位

BV

BV

DSS

决策支持系统

30 V

30 V

V

v

DS

DS

=30V, V

= 30V，V

GS

GS

=0V 1

= 0v 1

T

T

J

J

=55°C 5

= 55°C 5

IGSS

IGSS

±100 nA

±100钠

V

v

GS(th)

GS（TH）

Gate Threshold Voltage 0.6 1.07 1.5 V

栅极阈值电压0.6 - 1.07 - 1.5伏

I

我

D(ON)

D（on）

32 A

32

17.1 21

十七点一二一

T

T

J

J

=125°C 26 32

= 125°C 26 32

21.2 28 mΩ

21.2 28米Ω

g

G

FS

FS

50 S

50 S

V

v

SD

SD

0.7 1 V

0.7 1 V

IS

是

3.5 A

三点五一

C

C

iss

ISS

813 pF

813 PF

C

C

oss

OSS

98 pF

98 PF

C

C

rss

RSS

56 pF

56 PF

R

R

g

G

2.3 3.5 Ω

2.3 3.5Ω

Q

Q

g

G

8 12 nC

8 12数控

Q

Q

gs

GS

1.2 nC

1.2数控

Q

Q

gd

GD

2.6 nC

2.6数控

t

T

D(on)

D（on）

3 ns

3 ns

t

T

r

R

3 ns

3 ns

t 26 ns

T 26 ns

Maximum Body-Diode Continuous Current

最大体二极管连续电流

Input Capacitance

输入电容

Output Capacitance

输出电容

Turn-On DelayTime

开启延迟时间

DYNAMIC PARAMETERS

动态参数

Reverse Transfer Capacitance

反向传输电容

V

v

GS

GS

=0V, V

= 0V，V

DS

DS

=15V, f=1MHz

= 15V，F = 1mhz

SWITCHING PARAMETERS

切换参数

Gate resistance V

栅极电阻V

GS

GS

=0V, V

= 0V，V

DS

DS

=0V, f=1MHz

= 0V，F = 1mhz

Total Gate Charge

总栅极电荷

V

v

GS

GS

=4.5V, V

= 4.5V，V

DS

DS

=15V, I

= 15V时，我

D

D

=8A Gate Source Charge

= 8a栅源电荷

Gate Drain Charge

栅漏电荷

Turn-On Rise Time

开启上升时间

Turn-Off DelayTime

关闭延迟时间

V

v

GS

GS

=4.5V, V

= 4.5V，V

DS

DS

=15V, R

= 15V，R

L

l

=1.8Ω,

= 1.8Ω，

R =3Ω

R = 3Ω

Zero Gate Voltage Drain Current

零栅电压漏电流

Gate-Body leakage current

门体泄漏电流

mΩ

我Ω

IS

是

=1A,V

= 1A，V

GS

GS

=0V

= 0v

V

v

DS

DS

=5V, I

= 5V，I

D

D

=8A Forward Transconductance

= 8a跨导

Diode Forward Voltage

二极管的正向电压

V

v

GS

GS

=2.5V, I

= 2.5V，我

D

D

=4A

= 4a

Electrical Characteristics (T

电气特性（T

J

J

=25°C unless otherwise noted)

= 25°C，除非另有说明）

STATIC PARAMETERS

静态参数

Parameter Conditions

参数条件

Drain-Source Breakdown Voltage

漏源击穿电压

On state drain current

关于状态漏电流

I

我

D

D

=250µA, V

= 250µ，V

GS

GS

=0V

= 0v

V

v

GS

GS

=4.5V, V

= 4.5V，V

DS

DS

=5V

= 5v

V

v

GS

GS

=4.5V, I

= 4.5V，我

D

D

=8A

= 8a

R

R

DS(ON)

DS（on）

Static Drain-Source On-Resistance

静态漏源电阻

IDSS µA

智能决策支持系统µ一

V

v

DS

DS

=V

= V

GS，

GS，

I

我

D

D

=250µA

= 250µ一

V

v

DS

DS

=0V, V

= 0V，V

GS

GS

=±12V

=±12v

t

T

D(off)

D（off）

26 ns

26 ns

t

T

f

F

3.5 ns

3.5 ns

t

T

rr 10 ns

RR 10 ns

Q

Q

rr 2.4 nC

RR 2.4数控

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

本产品已设计好，符合消费市场要求。作为关键的应用或用途

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

生命支持设备或系统中的组件未经授权。AOS不承担任何责任。

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

不适用于其产品的应用或使用。AOS保留改进产品设计的权利，

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

功能与可靠性无需另行通知。

Body Diode Reverse Recovery Charge

二极管反向恢复充电

IF=8A, dI/dt=100A/µs

如果= 8A，di / dt = 100A／µS

Turn-Off DelayTime

关闭延迟时间

IF=8A, dI/dt=100A/µs

如果= 8A，di / dt = 100A／µS

R

R

GEN

消息

=3Ω

= 3Ω

Turn-Off Fall Time

关闭下降时间